John D. Cressler is the Ken Byers Professor of Electrical and Computer Engineering at the Georgia Institute of Technology. He received his Ph.D. in Applied Physics from Columbia University in 1990. After working on the research staff at the IBM Thomas J. Watson Research Center for eight years, he began his academic career at Auburn University in 1992 and then joined the faculty at Georgia Tech in 2002. His research interests center on developing blindingly fast, next-generation electronic components using silicon-based heterostructure devices and circuits. He and his research team have published over 450 scientific papers in this area. He has served as associate editor for three IEEE journals and on numerous conference program committees. He is a Fellow of the IEEE and was awarded the C. Holmes MacDonald National Outstanding Teacher Award (Eta Kappa Nu, 1996), the IEEE Third Millennium Medal (2000), the Office of Naval Research Young Investigator Award (1994), the Birdsong Merit Teaching Award (1998), and the Outstanding Faculty Leadership for the Development of Graduate Research Assistants Award (2007). His previous books include Silicon-Germanium Heterojunction Bipolar Transistors (2003), Reinventing Teenagers: The Gentle Art of Instilling Character in Our Young People (2004), and Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy (2006).